Semiconductor integrated circuit device

ABSTRACT

In a semiconductor integrated circuit device, a circuit block has a first MOS transistor, and a leakage current control circuit having a second MOS transistor and a current source, a source and drain circuit of the second MOS transistor is formed between the power supply line of the circuit block and a voltage point where operating voltage is supplied. This current source is connected to the power supply line and in a first state, the power supply line is driven to a first voltage by the second MOS transistor. In a second state, the power supply line is controlled at a second voltage by current flow in the current source and, the voltage applied across the source and drain of the first MOS transistor in the second state is smaller than the voltage applied across the source and drain of the first MOS transistor in the first state.

FIELD OF THE INVENTION

The present invention relates to a semiconductor integrated circuitdevice and relates in particular to a semiconductor integrated circuitdevice with excellent high speed and low power operationcharacteristics.

BACKGROUND OF THE INVENTION

As the chip manufacturing process progresses towards making smaller andfiner chip circuitry, the different leakage currents within the chip,including the subthreshold leakage current, gate tunneling leakagecurrent and GIDL (Gate-Induced Drain Leakage) current increase asdescribed in “Identifying defects in deep-submicron CMOS ICs”, IEEESpectrum, pp. 66-71, September, 1996 (hereafter referred to as reference1). These leakage currents increase the electrical current consumptionof the chip.

A method for reducing subthreshold leakage current in the related art isdisclosed in “A Low Power Data Holding Circuit with an IntermittentPower Supply Scheme”, Symposium on VLSI Circuits Digest of TechnicalPapers, pp. 14-15, 1996 (hereafter referred to as reference 2). In themethod of reference 2, a power switch composed of MOS transistors havinga threshold voltage with an absolute value sufficiently higher than theabsolute values of threshold voltages of MOS transistors comprising thecircuit block, is inserted in series with the circuit block power supplybetween power and ground. Here, the term MOS transistor is used in thesespecifications as a general term to describe an insulated gate typefield effect transistor. Also, the power supply voltage supplied to thecircuit is defined as having a high voltage (potential) and low voltage(potential). However, this is used here to respectively express thepower supply as the high voltage potential and the ground as the lowvoltage potential. While the chip is in standby (idle), the subthresholdleakage current flowing through the circuit block is cut off by turningthis power switch off. Usually, setting this power switch to off, erasesthe information stored in the information retention circuits (incircuits with a volatile information holding function for example;static memories, flip-flops, latches and register files, etc.) withinthe circuit block because the supply of power to the circuit blocks iscut off. In fact however, a particular time (TR) is required before theinformation within the information retention circuits is erased aftersetting the power switch to off. The method in reference 2 thereforeturns the power switch on once again before the time TR elapses afterthe power switch was turned off (Hereafter, the operation of turning thepower supply on once again is called the refresh operation.) Then, thepower supply switch is turned off after a fixed amount of time, and thisprocess is repeated to prevent information within the informationretention circuit from being erased and to reduce the amount of currentconsumption in the circuit block due to subthreshold leakage current.

A method disclosed in “A Novel Powering-down Scheme for Low Vt CMbSCircuits”, Symposium on VLSI Circuits Digest of Technical Papers, pp.44-45, 1998 (hereafter referred to as reference 3) has the same powerswitch and circuit block connections as in reference 2. In the method ofreference 3, a diode is connected in series with the power switch toclamp (reduce) to a lower level the excess voltage (voltage differentialbetween power and ground) supplied to the circuit block while the powerswitch is on and prevent the loss of information from informationretention circuits in the circuit block. In the figures given in theexample in reference 3, the voltage differential of the power suppliedto the circuit block while the power switch is off is 0.7 or more voltsand is the threshold voltage (PMOS is −0.14 volts and NMOS is 0.31volts) of the MOS transistor comprising the circuit block.

SUMMARY OF THE INVENTION

The power switch is composed of MOS transistors having a thresholdvoltage of a sufficiently high absolute value. In the method ofreference 2, the power switch is repeatedly turned on and off while thechip is in a standby (idle) state, and the node within the circuit blockare repeatedly discharged. Large-size MOS transistors are generally usedin the power switch to prevent a loss in speed from occurring during thecircuit block operation. The parasitic capacitance of all nodes of thecircuit block is also dependent on the circuit scale (integration) andmay at times exceed several nanofarads. The repeated turning of thepower switch on and off as well as the repeated discharging of the nodewithin the block circuit therefore increase the chip currentconsumption.

In the method of reference 3 on the other hand, the voltage (voltagedifferential between power and ground) supplied to the circuit blockwhen the power switch is off is larger than the absolute value of theMOS transistor threshold voltage (PMOS is −0.14 volts and NMOS is 0.31volts).

Noticing the fact that the information in the information retentioncircuit can still be retained even if the supply voltage when the powersupply switch was off is made lower than absolute value of the MOStransistor threshold voltage, the inventors developed a structurecapable of retaining information in the information retention circuitand reducing electrical power loss due to leakage (current).

To resolve the above mentioned problems with the related art, in atypical embodiment of the invention, a semiconductor integrated circuitdevice comprising a circuit block having a first MOS transistor, and aleakage current control circuit having a second MOS transistor and acurrent source; a source and drain circuit of the second MOS transistoris formed between the power supply line of the circuit block and voltagepotential point where the operating voltage is supplied. This currentsource is connected to the power supply line, and in a first state thepower supply line is driven to a first voltage by the second MOStransistor and, in a second state, the power supply line is controlledat a second voltage by current flow in the current source. The voltageapplied across the source and drain of the first MOS transistor in thesecond state is smaller than the voltage applied across the source anddrain of the first MOS transistor in the first state.

The present invention is therefore capable of reducing the differenttypes of leakage current (subthreshold leakage current, GIDL current,gate tunneling current, etc.) while the circuit block is in standbystate while still maintaining the information stored in the informationretention circuits within the circuit block. The present invention alsoallows high speed circuit block operation while the circuit block is inthe operation state.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing the basic structure of the embodimentof the present invention;

FIG. 2 is a timing chart for the operation example in FIG. 1;

FIG. 3 is a graph showing the dependency of the drain-source voltage onthe MOS transistor threshold voltage;

FIG. 4 is a timing chart when the virtual power line has completelydischarged;

FIG. 5 is a timing chart showing characteristics during inverteroperation;

FIG. 6 is a timing chart showing characteristics during inverter standby(idle).

FIG. 7 is a timing chart showing characteristics during inverter standby(idle);

FIG. 8 is a circuit diagram showing the structure for controlling thesubstrate bias potential of the circuit block;

FIG. 9 is a timing chart for the operation example in FIG. 8;

FIG. 10 is a graph showing characteristics of the structure in FIG. 8when the inverter is in standby (idle);

FIG. 11 is a circuit diagram showing another structure for controllingthe substrate bias potential of the circuit block;

FIG. 12 is a drawing showing a structure utilizing a current sourcedifferent from FIG. 1;

FIG. 13 is a timing chart for the operation example in FIG. 12;

FIG. 14 is a drawing showing a structure utilizing a current sourcedifferent from FIG. 1;

FIG. 15 is a structure using a resistor as the current source of FIG. 1;

FIG. 16 is a diagram showing a structure using a constant currentcircuit as the current source of FIG. 1;

FIG. 17 is a diagram showing a structure using a voltage source insteadof the current source of FIG. 1.

FIG. 18 is a diagram showing the structure for achieving the deepstandby state;

FIG. 19 is a timing chart for the operation in FIG. 18;

FIG. 20 is a diagram showing a structure utilizing an NMOS transistor asthe power switch;

FIG. 21 is a diagram showing a structure when using both a PMOStransistor and NMOS transistor as the power switch;

FIG. 22 is a diagram showing a structure of the external interface ofthe power switch controller;

FIG. 23 is a diagram showing the structure of a power switch controllerfor controlling the slew rate of the virtual voltage line;

FIG. 24 is a timing chart for the operation of FIG. 23;

FIG. 25 is a diagram of a structure for another power switch controllerfor controlling the slew rate of the virtual voltage line;

FIG. 26 is a timing chart for the operation in FIG. 25;

FIG. 27 is a diagram of a structure for another power switch controllerfor controlling the slew rate of the virtual voltage line;

FIG. 28 is a timing chart for the operation in FIG. 27;

FIG. 29 is a diagram of a structure for another power switch controllerfor controlling the slew rate of the virtual voltage line;

FIG. 30 is a timing chart for the operation in FIG. 29;

FIG. 31 is a diagram showing the structure of the static memory of thepresent invention;

FIG. 32 is a timing chart for the operation in FIG. 31;

FIG. 33 is a diagram showing another structure of the static memory ofthe present invention;

FIG. 34 is a timing chart for the operation in FIG. 33;

FIG. 35 is a circuit diagram showing the structure of the chip of thepresent invention;

FIG. 36 is a circuit diagram showing the structure of the chip wheninput from a three-type power supply;

FIG. 37 is a circuit diagram showing the structure of the chip one powersupply having an internal voltage regulator;

FIG. 38 showing a combination of power switch and voltage regulator;

FIG. 39 is a circuit diagram showing a chip composed of a power switchutilizing NMOS transistors;

FIG. 40 is a circuit diagram showing the structure of the latch levelconversion circuit of the present invention; and

FIG. 41 is a graph defining the threshold voltage Vth of the MOStransistor.

The embodiments of the present invention are hereafter described whilereferring to the drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

First Embodiment

FIG. 1 is a circuit diagram showing the basic structure of theinvention. In the figure, CKT denotes the circuit block, PSW1 denotesthe power switch, VDD denotes a power supply voltage for example with avoltage of 1.0 volts, VVDD denotes the virtual power line, VSS denotesthe ground with a voltage of 0 volts, and PSC denotes the power switchcontroller. A circuit block CKT as shown for example in FIG. 1 containsa logic circuit LG1 composed of an inverter INV, a NAND circuit NAND, aNOR circuit NOR and a flip-flop circuit FF; and a memory MEM1 composedof a memory cell array MARY, word decoder DEC and sensing amplifier SA,etc. The circuit block CKT may also be comprised only of a logic circuitLG1 or a memory MEM1. One characteristic feature is it (circuit block)contains information retention circuits such as the flip-flop FF of thelogic circuit LG1 and the memory cell array MARY. Here, the informationretention circuits are circuits with volatile information retentionfunctions and that information is determined by the CMOS logic.

The power switch controller PSC controls the on and off operation of thepower switch PSW1 connected between the power supply VDD and the virtualpower line VVDD. The power switch controller PSC also controls thecurrent flow in the power supply VDD and the virtual power line VVDD. Acurrent source is also connected between the power supply VDD and thevirtual power line VVDD, and limits the current flowing to the virtualpower line VVDD from the power supply VDD. The circuit block CKT isconnected between the virtual power line VVDD and the ground VSS and thevirtual power line VVDD is equivalent to an actual power line in thecircuit block CKT. In other words, the current supplied to the circuitblock during operation is mainly supplied from the power switch PSW1;and the current supplied to the circuit block during standby operationis mainly supplied to the current source PSW2. Though not shown in FIG.1, the voltage of the power supply VDD is the circuit block CKToperating voltage and is supplied from a stable power supply circuit.

The operation of FIG. 1 is shown next utilizing the timing chart of FIG.2. Prior to time T1, the gate signal PSWGATE1 of power switch PSW1 isdriven to low level by the power switch controller PSC and the powerswitch PSW1 turns on. In this state, power is supplied to the circuitblock CKT by way of the power switch PSW1 so that the virtual power lineVVDD reaches VDD potential and the circuit block CKT is operable (inoperating state). At time T1, the gate signal PSWGATE1 of power switchPSW1 is driven to high level by the power switch controller PSC and thepower switch PSW1 turns off. The voltage (or voltage potential) ofvirtual power line VVDD gradually discharges due to the current leakagefrom virtual power line VVDD of circuit block CKT to ground VSS by thepower switch PSW1 turning off. As the voltage of the virtual power lineVVDD becomes lower, Ioff (CKT) (The leakage current flowing to circuitblock CKT is listed as Ioff(CKT) that was initially large (at time T1)also gradually becomes a smaller value (period from time T1 to T2). Thevirtual power line VVDD reaches the final converging stable voltagelevel VFNL (period from time T2 to T3).

This voltage level (VFNL) attained here is determined under thecondition that: a leakage current (Ioff(CKT)) flowing from the virtualpower line VVDD of circuit block CKT to ground VSS is equal to a powerswitch PSW1 off current (Ioff(PSW1)) flowing to the virtual power lineVVDD added to a current I (PSW2) to a virtual power line VVDD by way ofcurrent source PSW2 from power supply VDD.

Though there are no particular restrictions, for the purposes ofsimplicity, the condition Ioff(PSW1)<<I(PSW2) is set. The absolute valueof the threshold voltage of the PMOS transistor comprising the powerswitch PSW1 may for example be set larger than the absolute value of thethreshold voltage of the PMOS transistor comprising the current sourcePSW2. In this case, the condition for virtual power line VVDD reachingthe appropriate level is (Ioff(CKT)=I(PSW2). The current source PSW2 isutilized in this way to prevent an excessive voltage drop in virtualpower line VVDD. Therefore, even if the initial (time T1) Ioff(CKT) islarge, the voltage (potential) of virtual power line VVDD eventuallydrops to equal I(PSW2) and automatically reaches a stable point, and thevalue of Ioff(CKT) at that time is limited by the value of I(PSW2). Inother words, the current source PSW2 functions as a leak current limitercircuit for circuit block CKT.

In these specifications, the MOS transistor threshold voltage Vth is thegate voltage when the MOS transistor drain current (This current doesnot include the subthreshold leak current.) starts to flow. This Vth isdetermined by the following widely used definitions. In a saturationregion where the gate voltage Vgs is sufficiently large and the drainvoltage Vds is also sufficiently large, the drain current Ids isproportional to the y power of (Vgs-Vth). The 1/y power of drain currentIds therefore forms a straight line at a sufficiently large gate voltageVgs as shown in FIG. 41. Therefore, the threshold voltage Vth can befound from a tangent of the direct line portion of the 1/y power of(Vgs-Vth) set as shown in FIG. 41. The value of y is greatly dependenton the gate length of the MOS transistor. In a long-channel MOStransistor having a gate length Lg of approximately 1 um, the value of yis approximately 2. In a short-channel MOS transistor with a gate lengthLg below 0.25 μm, the value of y is smaller than 2 and is for example avalue of approximately 1.4.

In the present invention, the size of the respective leakage currentssuch as the gate tunneling current and subthreshold leakage currentduring standby in the circuit block are determined by the current sourcePSW2. That value is smaller than the leakage current flowing in thecircuit block CKT during operation. The process for that effect isdescribed in detail next.

Generally, the smaller the voltage of the virtual power line VVDD, thesmaller the value Ioff(CKT) becomes. The reason is described utilizingthe leakage current flowing to the inverter INV within the circuit blockCKT as an example.

(1) The source voltage of the PMOS transistor MP1 becomes a smallvoltage due to the virtual power line VVDD voltage becoming small. Thesubstrate potential (voltage) of PMOS transistor MP1 is connected topower supply VDD and is a fixed voltage. A reverse bias (voltage) istherefore applied to the substrate and the PMOS transistor MP1 thresholdvoltage rises due to the back bias effect. The subthreshold leakagecurrent flow across the source-drain of PMOS transistor MP1 is in thisway reduced.

(2) The voltage across the source-drain of the PMOS transistor and NMOStransistor becomes smaller due to the small virtual power line VVDDvoltage. The PMOS transistor and NMOS transistor threshold voltage inthis way rises due to the DIBL (Drain Induced Barrier Lowering) effect.The subthreshold leakage current flow across the source-drain of thePMOS transistor and the NMOS transistor is in this way reduced. ThisDIBL (Drain Induced Barrier Lowering) effect can be made to show an evengreater effect by back-biasing across the substrate-source as describedin (1).

(3) The voltage across the source-drain of the PMOS transistor and NMOStransistor becomes smaller due to the small virtual power line VVDDvoltage. This small voltage acts to reduce the gate tunneling currentflowing in the gate dielectric (insulating film). The GIDL (Gate InducedDrain Leakage) current flowing to the substrate from the source or thedrain is also reduced.

The measurement example in FIG. 3 shows the leak reduction effectachieved by the present invention. The figure shows actual measuredvalues for the drain-source voltage VDS dependency on the NMOStransistor threshold voltage. The manufacturing process is for 0.13 μmCMOS (gate oxidation film is 1.9 nm) and the measured temperatures wereroom temperature. The voltage across the source-substrate VBS wasutilized as the parameter. By utilizing VBS as the reverse bias and byreducing VDS, the threshold voltage was raised approximately 0.15 volts.This signifies that when the subthreshold slope coefficient S is set to75 mV/dec, the leakage current flowing across the drain-source can bereduced approximately two digits.

As shown in FIG. 2 in the present invention, in order to retaininformation stored within the information holding circuit within thecircuit block CKT, the voltage value VFNL of the virtual power line VVDDcan be a voltage higher than voltage VRTN which is the minimum voltagecapable of retaining information stored within the information holdingcircuit. In the figures given in the example of FIG. 2, VDD is 1.0 volt,VFNL is 0.4 volts, and VRTN is 0.2 volts. In reference 2 there is nocomponent equivalent to current source PSW2 so power to the circuitblock is completely cut off during standby and untilIoff(CKT)=Ioff(PSW1)=0, the virtual power line VVDD discharges andreaches 0 volts. Therefore, as shown in FIG. 4, VFNL equals 0 which isless than VRTN, and information stored in the information storagecircuits cannot be retained. In reference 3 on the other hand, the powersupply voltage during standby is a value larger than the absolute valueof threshold voltage of the MOS transistor comprising the circuit blockCKT. This is assumed to be due to the general principle that the alreadyon MOS transistor, shuts off during standby when the power supplyvoltage is made smaller than the MOS transistor threshold voltage andthe status (information) held in the logic gates is then lost. However,in a CMOS logic circuit, making the power supply voltage smaller thanthe MOS transistor threshold voltage does not mean that information inthe logic circuits is lost. The inventors noticed the fact that in aCMOS logic circuit with a first conductive MOS transistor and a secondconductive MOS transistor connected in series, whether or not the logiccircuit information can be maintained (held) depends on the on/off ratioof current flow in the first conducting MOS transistor in an on-state,and current flow in the second conducting MOS transistor in anoff-state.

The mechanism for reducing leakage current and the mechanism formaintaining information in the information retention circuits aredescribed using the inverter INV within the circuit block CKT as atypical example of a CMOS logic circuit. Characteristics of the inverterINV during operation are shown in FIG. 5. The horizontal axis is theinverter input voltage and equivalent to the PMOS transistor MP1 andNMOS transistor MN1 gate signal voltage. The vertical axis is alogarithmic display of the drain current value I(ds) during gateoperation. When the input to the inverter INV is at a high level(voltage is power supply VDD), the PMOS transistor MP1 is in the offstate, reaching point d1 on the (device) characteristic graph and theMP1 drain current is the Ioff1_flow only. The NMOS transistor MN1 is inthe on state, point cl on the characteristic graph is reached and onlythe Ion1_n of the MN1 drain current flows. On the other hand, when theinverter input is at low level (voltage is at ground potential VSS), thePMOS transistor MP1 is in the on state, point al on the characteristicgraph is reached and only the Ion1_p drain current of MP1 flows. Whenthe NMOS transistor MN1 is in the off state, the point b1 on thecharacteristic graph is reached and only the Ioff1_n drain current ofMN1 flows. It can therefore be seen that an ON/OFF ratio forIon1_n/Ioff1_p can be obtained when the inverter input is at high level;and further that an ON/OFF ratio for Ion1_p/Ioff1_n can be obtained whenthe inverter input is at low level. In either case, it can be seen thatan ample ON/OFF ratio of 1 or more can be obtained. In regards toleakage current it can also be seen that an Ioff1_n current flows whenthe inverter input is at high level; and that an Ioff1_p current flowswhen the inverter input is at low level.

FIG. 6 is a graph showing inverter INV characteristics when the circuitblock CKT voltage (potential) of the virtual power line VVDD hasdischarged to V1 during standby. The voltage V1 as shown in FIG. 6 ismade to be smaller than the absolute value of the MOS transistorthreshold voltage during usual operation. However in this case also, itcan be seen that an ON/OFF ratio of Ion2_n/Ioff2_p is obtained when theinverter input is at high level; and that an ON/OFF ratio ofIon2_p/Ioff2_n is obtained when the inverter input is at low level. Ineither case, it can be seen that an ample ON/OFF ratio of 1 or more canbe obtained. Accordingly, one can observe that an information storagecircuit for storing information in a CMOS logic circuit can successfullyretain the internally accumulated information. Therefore the correctlogic status (information) can be maintained in the logic circuit. Nospecial circuit is needed for maintaining the logic status(information). In regards to leakage current it can further be seen thatan Ioff2_n current flows when the inverter input is at low level; andthat an Ioff2_p current flows when the inverter input is at high level.The above described effects (back bias effect, DIBL effect, gate leakagereduction effect, (GIDL current reduction effect) cause a state ofIoff_2 n <Ioff_1 n, Ioff2_p<Ioff1_p. Compared to FIG. 5, the inverterleakage current has become small in FIG. 6.

Taking special note of this MOS transistor ON/OFF ratio, an evaluationwas made of whether the CMOS circuit can correctly maintain the logicstatus (information). In the case for example of an inverter, the on/offcharacteristics are generally bad even with an on/off ratio of 1 ormore. In cases where absolute values for the inverter amplification rateare all at an input voltage level less than 1, there is no guaranteethat the correct logic state can be maintained (held) in a multistageconnection to the entire inverter. In these specifications, obtaining anample on/off rate signifies a state where the logic state (information)can be correctly retained (held) in multistage CMOS circuits or circuitshaving a positive feedback loop such as memory cells in SRAM devices.

Next, the minimum voltage VRTN capable of maintaining informationaccumulated within at information holding circuit, for example an SRAMcell or flip-flop circuit FF within the circuit block CKT is evaluated.

FIG. 7 is a graph of inverter characteristics when the voltage potentialof the virtual power line VVDD in FIG. 6 discharges from a voltage V1 toan even lower voltage V2 with the circuit block CKT in standby. When theinverter input is at high level, the on/off ratio is Ion3_n/Ioff3_p andan ample on/off ratio of 1 or more is obtained. However, it can be seenthat when the inverter input is at low level, the state isIon3_p/Ioff3_n<1 and an ample on/off ratio is not obtained. If theinverter input is at low level at this time, the logic information inthe inverter might become inverted.

Examining FIG. 6 and FIG. 7 shows that the standby voltage of thevirtual power line VVDD can be established at a value from V1 to V2 inorder to maintain the correct logic state (information) in the inverterINV. A minimum virtual power supply voltage for correct operation can beestablished in the same way even in a fully CMOS status RAM (SRAM)having for example six transistors. The term, correct operation as usedhere signifies the capability to retain (hold) information within theinformation holding circuit. No AC type operation is needed to achievethis correct operation so there is little need for special caution withSRAM static noise machines (SNM). When reducing the VRTN lower voltagelimit some deterioration in immunity to soft errors may occur. Howevereffective measures may be taken such as increasing the capacity of thememory mode of the information storage circuit or adding an errorcorrection circuit such as an ECC.

In the present invention, the voltage for maintaining (holding) the DCstate (logic state) during standby in the circuit within the circuitblock CKT is determined by the (minimum voltage) VRTN. Unlike thefigures given in the example for reference 3, there is no need to makethis value larger than the absolute value of threshold voltage of theMOS transistor. The present invention has shown that information can bemaintained within the information holding circuit during standby, evenif a voltage smaller than the absolute threshold voltage of the MOStransistor is used. Further, in reference 3, a voltage equivalent to theVFNL was set by a clamping voltage on the diode. However, the structurein FIG. 1, this value is automatically set by matching Ioff(CKT) andI(PSW2). This point is described in detail later.

In the example in FIG. 1, when applying a substrate voltage to thesubstrate terminal of the MOS transistor, the power supply VDD is thePMOS transistor and the ground is the NMOS transistor. Thesespecifications assume the connections in FIG. 1 for the substratevoltage potential. However there are no particular limitations on thevoltage potential. The connection shown in FIG. 1 has the advantage thata large capacitance is not required for driving the substrate. However,the substrate can also be driven as needed according to methodsdescribed later on. Needless to say however, the leakage currentreduction effect may change when the connections differ from FIG. 1. Amodified example for enhancing the leakage current reduction effect bylowering the MOS transistor substrate voltage potential is described.

In the present invention, the minimum voltage VFNL of the virtual powerline voltage potential is a value larger than the voltage VRTN. Also,the smaller the VFNL becomes, the larger the leakage current reductioneffect in the circuit block CKT during standby. Therefore, if thevoltage VRTN can be made a small value, then the VFNL can be reduced bythat amount and the circuit block CKT leakage current can be reduced.FIG. 8 is a modified example for achieving a VRTN value smaller than theembodiment in FIG. 1.

Examining FIG. 7 shows that the inability to maintain (keep) the logicstate (information) by Ion3_p/Ioff3_n<1 during standby is caused by adrop in NMOS transistor MN1 off current (Ioff3_n). This drop is smallcompared to the drop in PMOS transistor MP1 on current (Ion3_p) duringdischarge of the virtual power line VVDD in standby. Therefore in theembodiment of FIG. 8 the substrate voltage of NMOS transistor MN1 iscontrolled during standby and the threshold voltage of the NMOStransistor raised. In this way, even a low virtual power line VVDDvoltage can satisfy Ion3_p/Ioff3_n<1. Here, VBC is the substrate biascontrol circuit and VBN is the substrate bias signal for the NMOStransistor. A timing chart for controlling the substrate voltagepotential is shown in FIG. 9. Applying a −1.5 volts as the substratebias signal VBN during standby (period from time T1 to T3) controls theNMOS transistor MN1 off current (Ioff3_n). FIG. 10 is a graph showingthe characteristics of the inverter in FIG. 8. Here, raising the NMOStransistor threshold, moves the NMOS transistor curve farther downwardduring standby than in the case of FIG. 7. In this way, even if thevoltage of the virtual power line VVDD discharges down to voltage V2during standby the same as in FIG. 7, the on/off ratio (Ion4_p/Ioff4/n)will be a value sufficiently larger than 1 or more when the inverterinput is at low level.

If the MOS transistor characteristics within the circuit block CKT aresatisfactorily controlled in this way during standby, then a smallerVRTN value can be obtained compared to when there is no control (oftransistor characteristics). FIG. 8 shows an effective method forcontrolling the transistor characteristics by controlling the substratebias. FIG. 11 is a structure for controlling the substrate biaspotential of the PMOS transistor and the NMOS transistor within thecircuit block CKT. The threshold voltages of the PMOS transistor andNMOS transistor should preferably be adjusted for a balanced state toachieve normal circuit operation in order to apply a low voltage as thepower to the circuit block during standby. In FIG. 11 the PMOStransistor substrate bias signal VBP is also controlled in addition tothe structure in FIG. 8. Raising the PMOS transistor threshold voltagehas the effect of raising the VRTN however a configuration capable ofseparately controlling the threshold voltages of the PMOS transistor andNMOS transistor is effective in order to lower the overall leakagecurrent and to achieve balanced PMOS transistor and NMOS transistorthreshold voltages.

Though there are no particular restrictions on the substrate bias signalVBP and VBN voltages during operation, a low voltage may be applied toVBP (for example, VDD or a lower voltage) and a high voltage may beapplied to VBN (for example VSS or a higher voltage) to achieve highspeed circuit block CKT operation. An optimal voltage may be applied tothe substrate bias signal VBP, VBN according to the high speed operationneeded in the circuit block CKT. Typical inverter INV configurations(structures) within the circuit block CKT were shown in FIG. 8 and FIG.11. These however showed nothing more than typical CMOS logic circuitsand needless to say, can be applied to various circuits containinginformation retention circuits such as shown in the circuit block ofFIG. 1. In substrate bias control in particular, if the substrate biasvoltage value applied to the MOS transistor substrate is determinedaccording to the process, temperature and power supply voltage, thenirregularities in the process and fluctuations in the temperature andpower supply voltage can be compensated and VRTN made a smaller value.

A specific structure for the current source PSW2 is described next.

The VFNL is established by conditions wherein the leakage currentIoff(CKT) flowing from virtual power line VVDD to ground VSS is equalto; the off current Ioff(PSW1) of power switch PSW1 flowing to virtualpower line VVDD from power supply VDD plus the current I(PSW2) flowingto virtual power line VVDD by way of current source PSW2 from the powersupply VDD. Setting the VFNL is simple if conditions where the currentIoff(PSW1)<<I(PSW2) can be established as described above. If theseconditions can be established then the voltage of the virtual power lineVVDD during standby then a value satisfying Ioff(CKT)=I(PSW2) duringnormal operation can be obtained. The condition Ioff(PSW1)<<I(PSW2) canbe satisfied by selecting device parameters for the power switch PSW1and the current source PSW2. The configuration (or structure) of FIG. 12overdrives the power switch PSW1 gate signal up to VDD+α during standbyas shown in FIG. 13. A reverse bias voltage is in this way appliedacross the source-drain of power switch PSW1 and the Ioff(PSW1) becomessmall. This is one more method for achieving the Ioff(PSW1)<<I(PSW2)condition. A structure for the current source PSW2 to achieve thespecified VFNL in FIG. 12 through FIG. 16 is described next.

In the structures in FIG. 1 and FIG. 12, I(PSW2) is determined by theoff-current of PMOS transistor PSW2 in order to connect the gate signalof PMOS transistor PSW2 to power supply VDD. The Ioff(CKT) is alsomainly determined by the off current of the MOS transistor. The maincomponents of the MOS transistor drain-source current are diffusioncurrent and drift current. The main component of the on-current is driftcurrent and the main component of the off-current is diffusion current.These drift currents and diffusion currents are characterized in thatthe temperature characteristics change inversely according to thesecurrents. In the I(PSW2) and Ioff(CKT), the MOS transistor off currentis a main component, and the subthreshold leakage current is a maincomponent so that fluctuations in characteristics tend to be the samefor temperature and power supply voltage fluctuations and processirregularities. In other words, if I(PSW2) becomes large due totemperature fluctuations then the Ioff(CKT) will also become large.Also, if I(PSW2) becomes small then the Ioff(CKT) will also become smalland serve to suppress fluctuations in the virtual power line VVDD tosmall fluctuations. This has the advantages that leakage current duringstandby is in this way determined only by the gate width W of one MOStransistor and that the design specifications for VFNL are easy toachieve.

FIG. 14 is a configuration (or structure) used when the gate signal ofthe PMOS transistor comprising the current source PSW2 of FIG. 1 isconnected to VSS (ground) In the structure of FIG. 14, the fluctuationsin device characteristics such as the I(PSW2) and Ioff(CKT) temperaturesand power supply VDD might be different since the Ioff(CKT) is mainlydetermined by the transistor off current. Therefore the necessity occursfor taking the above fluctuations in characteristics fully into accountfor a VNFL value determined by the balance of I(PSW2) and Ioff(CKT).However, the ability to establish the I(PSW2) value by the PMOStransistor PSW2 on current, in which the current consumption of thecircuit block CKT during standby is determined by the PMOS transistorPSW2 on-current has the advantages of smaller temperature dependency andstable operating characteristics compared to finding that value bydetermining the PMOS transistor PSW2 off-current. Also, the currentsource PSW2 must provide just enough current to maintain the informationin the information retention circuits within the circuit block CKT andthis structure has the advantage that a small-sized current source PSW2is capable of supplying this current as the transistor on-current.

In the structure in FIG. 15, the I(PSW2) is determined by the resistorR1. There are no particular restrictions on the method to achieve thisresistance. A diffusion resistor, a well resistor or a gate wiringresistor may be used. Determining I(PSW2) by the resistance has theadvantage the current source PSW2 will have small temperaturedependency.

FIG. 16 is a structure for achieving I(PSW2) with a constant currentcircuit. A constant current circuit IS1 is composed of PMOS transistorsMP10, MP11 and a constant current source IS10. Utilizing a constantcurrent circuit to comprise I(PSW2) has the advantages that the currentis determined by the constant current circuit and the leakage currentvalue in the circuit block during standby is not dependent on thevirtual power line VVDD or the scale of the circuit block CKT.

The various configurations of the current source PSW2 were describedabove. In the present invention, the power during operation was mainlysupplied to the circuit block CKT by the power switch PSW1. Duringstandby the power was mainly supplied to the circuit block CKT by thecurrent source PSW2. During standby the VFNL is determined by thebalance between Ioff(CKT) and the current of the current source PSW2 andit is crucial that the condition VFNL>VRTN be satisfied. Theconfiguration (structure) of the current source is not limited to thatdescribed above. Therefore a structure may also be used that has nocurrent source PSW2 and determines the VFNL by the balance of the offcurrent Ioff(PSW1) of the power switch PSW1 during standby and theIoff(CKT), and sets the size and threshold voltage of power switch PSW1so that VFNL is greater than VRTN, or sets the thickness of the gatedielectric film (In these specifications, the gate dielectric is thegate dielectric thickness taking into account the conductance of thegate insulation (dielectric) material.) and gate signal amplitude, etc.

For example, during operation when the required current flow in powerswitch PSW1 is several amperes, and the leakage current of the circuitblock CKT is set to several hundred microamperes during standby, theon/off ratio of power switch PSW1 may be four digits. When the on/offratio required in power switch PSW1 is small, the leakage reductionmethod of the present invention can be achieved by a structure thateliminates the current source PSW2 from the structure of FIG. 1 andcontrols the power switch PSW1 in this way. A structure eliminating thecurrent source PSW2 in this way has the advantage of small overhead.However installing a current source PSW2 has the advantage of renderinga large degree of freedom in design. For example, when a large on/offratio is needed, a power switch PSW1 design may be evaluated to providethat on/off ratio. A further advantage is that there is no need toconsider the balance adjustment needed between the Ioff(PSW1) andIoff(CKT) during standby. Utilizing separate circuits for supply powerto the circuit block CKT during operation from the power switch PSW1,and for supplying power to the circuit block CKT during standby makesthe design of these leakage control circuits simple.

FIG. 17 is another example for setting the VFNL during standby. In FIG.17, the voltage source VFNLGEN generates a VFNL of a specified voltagedrop and drives the virtual power line VVDD. In the operating state,power is supplied to the circuit block by the power switch PSW1 and instandby state power is supplied to the circuit block by the voltagesource VFNLGEN. During standby, the value of VFNL generated from thevoltage source VFNLGEN may be a value of VRTN or more. Needless to sayhowever, the lower the voltage, the smaller the value of leakage currentthat can be obtained from the circuit block CKT during standby. Thereare no particular restrictions on the configuration (structure) of thevoltage source VFNLGEN. When the voltage source VFNLGEN is integratedonto the same chip holding the circuit block CKT, then a structure forgenerating a specific VFNL can be achieved for example by utilizing avoltage regulator of the known art with the power supply VDD. Thevoltage source VFNLGEN may also be installed outside of that chip. Whendirectly generating VFNL from the voltage source VFNLGEN as shown inFIG. 17, a design can be achieved for making the voltage of the virtualpower line VVDD close to that of VRTN. The output voltage VFNL of thevoltage source VFNLGEN may also be automatically controlled according tothe power supply VDD voltage, temperature and process conditions, etc.

The present invention is characterized in that power consumption due toleakage current in the circuit block during the standby state can begreatly reduced while still maintaining (keeping) the information withinthe information retention circuits within the circuit block. Thisstandby function is here called the stand-by state with data retention.In addition to this stand-by state with data retention, the VFNL may beset to a smaller value (value of VRTN or lower) by reducing the currentflowing in the current source PSW2 and reducing the voltage of thevoltage source VFNLGEN (configuration in FIG. 17). The information inthe information retention circuit within the circuit block will be lostin this structure, however a standby state (Called the deep stand-bystate to distinguish it from the stand-by state with data retention. Inthese specifications, these terms are used to classify the two states.)Having lower power consumption than in stand-by state with dataretention can be achieved.

As one example, the structure of FIG. 18 shows an example for achievingthe deep stand-by state of FIG. 14. In FIG. 18, the gate signal PSWGATE1a of the current source PSW2 is controlled by the power switchcontroller PSC. FIG. 19 is a timing chart showing an example of theoperation in FIG. 18. In the stand-by state with data retention fromtime T1 to time T2, a low level is applied to the gate signal of currentsource PSW2 the same as the case of the structure in FIG. 14 by means ofthe power switch controller PSC. In the deep stand-by state from time T2to time T3, a high level is applied to the gate signal of the currentsource PSW2 by the power switch controller PSC. In the deep stand-bystate, I(PSW2) is determined by the on current of PMOS transistor PSW2and the VFNL is determined by the interaction between this on-currentand Ioff(CKT), and the condition VFNL>VRTN satisfied. However, since thePMOS transistor PSW2 is off from time T2 to time T3, the value of VFNLis nearly zero (of course, a value below VRTN). Though informationcannot be held in the information retention circuits during deepstand-by state, the deep stand-by state has the advantage of lowerleakage current than the stand-by state with data retention. Ifretention of information in the information retention circuits is notrequired, then power consumption can be reduced even further by changingto the deep stand-by state.

The above structures utilized PMOS transistors in the power switch PSW1and during the standby state controlled the current flow between powersupply VDD and the virtual power line VVDD. However, as shown in FIG.20, an NMOS transistor PSW1 n may be utilized as the power switch andduring standby may regulate the current flow between the virtual groundVVSS and the ground VSS. A configuration (structure) equivalent to thecurrent source PSW2 of FIG. 1 is achieved by the NMOS transistor PSW2 nin FIG. 20. The on-resistance of the power switch is small duringoperation but the impedance of the virtual power line VVDD or thevirtual ground (line) VSS can be reduced so that a drop in speed of thecircuit block CKT applicable to the present invention can be prevented.Generally, PMOS transistors have small on-resistance near the gate widthcompared to NMOS transistors. Accordingly, the structure of FIG. 20 cansuppress the circuit block speed drop to a smaller amount than thestructure of FIG. 1 during operation with the same surface areaoverhead. Further, a circuit block with an equivalent operating speedcan be achieved with a smaller surface area overhead. FIG. 21 is astructure combining FIG. 1 and FIG. 20. Both the power switch PSW2 andthe current source PSW2 n are installed in the structure of FIG. 21,however a circuit using only either one of these can also be achieved.Needless to say, adaptations of all types are applicable to thestructures described in these specifications. However the polarity maysometimes be different. To apply the example in FIG. 8 describing theapplication of substrate bias control to the structure in FIG. 20, thePMOS transistor threshold voltage must be raised instead of the NMOStransistor as shown in FIG. 8. The following explanations also describeexamples utilizing PMOS transistors as the power switch and currentsource. Needless to say however, these can be achieved with theconfigurations (structures) of FIG. 20 or FIG. 21.

There are no limitations on the material or thickness of the gatedielectric for the MOS transistor comprising the power switch. To reducethe on-resistance per surface area of power switch PSW1 duringoperation, the gate dielectric (film) of the MOS transistor comprisingthe power switch PSW1 should be thin and the absolute value of thethreshold voltage should be made small. However large voltages sometimescannot be applied to the electrode when the gate dielectric (film) isthin. Also, to reduce the gate tunneling leakage current, a MOStransistor with a gate tunneling current smaller than the combined gatetunneling current of the MOS transistors comprising the circuit blockCKT, should be utilized as the power switch PSW1. One structure thatsatisfies all of these tradeoffs has a thick gate dielectric film forthe MOS transistors comprising the power switch PSW1 compared to the MOStransistors comprising the circuit block CKT. This structure furtherapplies a voltage amplitude to the gate terminal of power switch PSW1that is larger than power supply VDD. Utilizing this structure allowsutilizing MOS transistors used in the I/O circuit (input buffer oroutput buffer) for achieving an interface outside of the chip, in acircuit block CKT integrated onto the chip that holds MOS transistorscomprising the power switch PSW1. The MOS transistors used in inputbuffer or output buffer generally have a high breakdown voltage so theycan be utilized because their gate dielectric (film) is thicker than thegate dielectric (film) of the MOS transistors comprising the circuitblock. Joint use of the transistors in the power switch and I/O circuitallows reducing the type of MOS transistor gate dielectric used in theoverall chip and consequently the cost can be reduced. In this case, theamplitude of the gate signal PSWGATE1 can be the same as the I/Ovoltage. The on-resistance during operation can in this way be reducedand a power switch with a sufticiently small leakage current duringstandby can be obtained.

Components with a higher threshold voltage than the MOS transistorscomprising the circuit block can also be used in the threshold voltageof the power switch PSW1. The condition Ioff(PSW1)<<I(PSW2) can in thisway be easily satisfied and since the VFNL is determined by I(PSW2), thedesign of the present invention is simple. The gate length of thecurrent source PSW2 can be made thicker than the gate length of the MOStransistor comprising the circuit block CKT. A structure of this typeallows lowering variations in the threshold that occur in the process.The size of the leakage current flow in the circuit block current duringstandby due to process variations can also be reduced.

A structure of the power switch controller PSC is described next.

FIG. 22 is a structure of the interface for the power switch controllerPSC. The power switch controller PSC that controls the power switch PSW1and current source PSW2 implements control by means of a powercontrolling circuit PMG. This allows designing the circuit block CKTlow-leak mechanism separately from the power controlling circuit PMGthat reduces power consumption in the chip overall. A handshake betweenthe power controlling circuit PMG and the power switch controller PSC bymeans of the request line REQ and response line ACK controls the on/offoperation of the power switch PSW1 and controls the state of the circuitblock. Here, setting the request line REQ to high level turns on thepower switch PSW1 and controls the circuit block CKT in the operationstate. After the power switch PSW1 turns fully on and the virtual powerline VVDD is charged to the voltage potential of power supply VDD, whenthe response line ACK reaches high level, the external section of thepower switch controller (power controlling circuit PMG) is notified thatthe circuit block CKT has switched to the operation state. Conversely,when the request line REQ is set to low level, the power switch PSW1turns off and the circuit block is controlled to the standby state. Whenthe power switch PSW1 turns fully off, and the response line ACKswitches to low level, the external section of the power switchcontroller is notified that the circuit block CKT has switched to thestandby state.

When the circuit block in a device is used, the circuit block mighttrigger by mistake if the power switch PSW1 is not in a completely onstate. In the structure of FIG. 22, the circuit block shifts to theoperation state and the response line ACK detects that the circuit blockis completely usable so that misoperation (triggering by mistake) isprevented.

FIG. 23 is a more detailed structure of the power switch controller PSC.In the figure, C1 is a drive circuit (hereafter described as a drivingcircuit with high impedance) for the gate signal PSWGATE1 having smalldrive performance. Also in the figure, C2 is a drive circuit (hereafterdescribed as a driving circuit with low impedance) for the gate signalPSWGATE1 having drive performance larger than C1. Also in the figure, C3is a voltage potential detector for the gate signal PSWGATEL, C1DRV is acontrol circuit for C1, C2DRV is a control circuit for C2 and TIM1 is atimer.

FIG. 24 is a timing chart for the operation in FIG. 23. When operationhas shifted from standby to the operation state and the request line REQreaches high level, first of all the gate signal PSWGATE1 is driven tohigh impedance by C1 by way of the C1DRV control circuit for C1. Thepotential detector C3 detects that the gate signal PSWGATE1 was drivento a level (Vth1) at time T1A, and TRG1 is driven to high level by thetimer TIM1. The gate signal PSWGATE1 is in this way driven to a lowimpedance by C2 by way of the C2DRV control circuit for C2. The timerTIM1 measures the time TA from time T1 to T1A, and after a time TBestablished using the specific relation (for example ½) with timeTA,(time T1B in the example in FIG. 24) the response line ACK is drivento high level. There are no particular restrictions on the timercharacteristics (relation between time TA and time TB) however the gatesignal PSWGATE1 is driven completely to low level at time T1B. Also thevirtual power line VVDD may be fully charged up to the voltage potentialof VDD.

When operation has shifted from the operation state to standby state,and the request line REQ reaches low level at time T2.

The gate signal PSWGATE1 is then first of all driven to high impedanceby C1, by way of the C1DRV control circuit for C1. The potentialdetector C3 detects that the gate signal PSWGATE1 was driven to a levelVth2 at time T2A, and TRG1 is driven to low level by the timer TIM1. Thegate signal PSWGATE1 is in this way driven to a low impedance by C2 byway of the C2DRV control circuit for C2. Based on the time from time T2to time T2A, the timer drives the response line ACK to low level after acertain time (time T2B). There are no particular restrictions on thetimer characteristics (relation between time TA′ from time T2B to timeT2A and time TTB′ from time T2A to time T2B) and even a time for exampleof TA′/TB′=2 is satisfactory.

The present invention is characterized in that information is retained(held) within the information retention circuits. Of course thisinformation must be retained when changing from the standby state to theoperation state and also when changing from the operation state to thestandby state. Information within the information retention circuitsmight be destroyed due to coupling noise from the virtual power lineVVDD during the change from the standby state to the operation state. Toeliminate this problem, the structure in FIG. 23 utilizes a drivingcircuit with high impedance C1 and a driving circuit with low impedanceC2 to drive the gate signal PSWGATE1 so the slew rate is reduced. Thecoupling noise from the virtual power line VVDD is reduced and theinformation within the information retention circuits can be preventedfrom being destroyed.

There are no particular restrictions here on the method for setting theslew rate dV/dt of the virtual power line VVDD during the shift from thestandby state to the operation state. For example, when the couplingcapacitance between the virtual power line VVDD and its memory mode isset to Cp (coupling capacitance), a current Cp*dV/dt flows in the memorynode. The slew rate dV/dt may be set to satisfy Imax>Cp*dV/dt when theImax is set to an upper limit of current flow that will not damage thememory when flowing in the memory node. In FIG. 6 for example, Ion2_n isa general guide for setting Imax. When the inverter input is at highlevel (voltage is V1) in FIG. 6, and a current larger than Ion2_n isapplied to the inverter output., the current becomes larger than theNMOS transistor current (Ion2_n driving the inverter output voltage tolow level. The inverter output cannot then be maintained at low leveland malfunctions occur.

Generally, during the shift from standby state to operation state, alarge capacitance is required to charge up to the power supply VDDpotential when charging the virtual power line VDD and charging thenodes that are at high level within the circuit block CKT, etc. A largeinrush current (voltage surge) might occur in the power supply VDDduring this charging. This large inrush current causes voltage drops inthe power supply VDD, and creates the hazard that other circuits usingthe power supply VDD might malfunction. In the structures in FIG. 2 andFIG. 3, the slew rate of the virtual power supply line VVDD is small sothat the circuit can slowly charge to a large capacitance. Therefore theinrush current can be reduced and operation malfunctions can beprevented.

In the structure in FIG. 25, the voltage potential of the gate signalPSWGATE1 is detected as shown in the example in FIG. 23. Also ratherthan generating a response line ACK using a timer, the voltage of thevirtual power line VVDD is detected and a response line ACK generated.Here, SENS1 is the potential detector for the virtual voltage lineSENS1.

FIG. 26 is a timing chart for the operation in FIG. 25. During the shiftfrom standby state to operation state, when the request line REQ sets tohigh level at time T1, the gate signal PSWGATE1 is driven to a highimpedance by C1 by way of the C1DRV control circuit for C1. The SENS1potential detector for virtual voltage line VVDD detects that it hasbeen driven to a level Vth3 at time T1C and drives the response line ACKto high level. At the same time, the gate signal PSWGATE1 is driven to alow impedance by C2 by way of the C2DRV control circuit for C2. Duringthe shift from operation state to standby state, when the request lineREQ sets to low level at time T2, the gate signal PSWGATE1 is driven toa high impedance by C1 by way of the C1DRV control circuit for C1; andthe gate signal PSWGATE1 is driven to a low impedance by C2 by way ofthe C2DRV control circuit for C2.

In FIG. 27, the driving of the virtual power line VVDD during the shiftfrom standby state to operation state is performed by a power switchPSW2 separate from the power switch PSW1. The power switch PSW1 s hassmall (surface area is also small) drive power compared to the powerswitch PSW1. FIG. 28 is a timing chart for the operation in FIG. 27.During the shift from the standby state to the operation state, first ofall the power switch PSW1 s is turned on by way of the C1DRV controlcircuit for C1, when the request line REQ reaches high level at time T1.The SENS1 potential detector for virtual voltage line detects that theline has been driven to a level Vth3 at time T1C and drives the responseline ACK to high level. At the same time, the gate signal PSWGATE1 isdriven to a low impedance by C2 by way of the C2DRV control circuit forC2. During the shift from operation state to standby state, when therequest line REQ sets to low level at time T2, the power switch PSW1 sis turned off by the C1DRV control circuit for C1; and the gate signalPSWGATE1 is driven to a low impedance by C2 by way of the C2DRV controlcircuit for C2. In this way, in the structure of FIG. 27, the virtualpower line VVDD is driven utilizing a small power switch PSW1 s and theslew rate of the virtual power line VVDD is controlled.

The structure shown in FIG. 29 is a combination of the method forgenerating the response line ACK signal of FIG. 23 and the slew ratecontrol for the virtual power line VVDD of FIG. 27. Here, SENS2 is apotential detector for the virtual voltage line, and TIM2 is a timer.FIG. 30 is a timing chart for the operation. During the shift from thestandby state to the operation state, when the request line REQ sets tohigh level at time T1, first of all the power switch PSW1 s turns on byway of the C1DRV control circuit for C1. The SENS2 potential detectorfor the virtual voltage line detects that the virtual voltage line hasbeen driven to a level Vth3 at time T1C, and drives the gate signalPSWGATE1 to low level by means of C2 by way of the C2DRV control circuitfor C2. The potential detector C3 detects that the gate signal PSWGATE1been driven up to level Vth1 at time T1A, and TRG2 is driven to highlevel by the timer TIM2.

The timer TIM2 drives the response line ACK to high level after acertain time (time T1B) based on the time from time T1C to time T1A.There are no particular restrictions on the timer characteristics(relation of time TA from time T1C to time T1A, with the time TB fromtime T1A to time T1B) However, the gate signal PSWGATE1 may be driven toa completely low level at time T1B, and further the virtual voltage lineVVDD may be charged fully up to power supply VDD, and may for exampleeven be TA/TB=2. During the shift from operation state to the standbystate, when the request line REQ sets to low level at time T2, first ofall the power switch PSW1 s is turned off by the C1DRV control circuitfor C1, and the PSWGATE1 is driven to low impedance by C2, by way of theC2DRV control circuit for C2. The potential detector C3 detects that thegate signal PSWGATE1 been driven up to a level Vth2 at time T2A, andTRG2 is driven to low level by the timer TIM2. The timer TIM2 drives theresponse line ACK to low level after a certain time (time T2B) based onthe time from time T2 to time T2A. There are no particular restrictionson the timer characteristics (relation of time TA′ from time T2B to timeT2A, with the time TB′ from time T2A to time T2B) and for example evenTA′/TB′=2 is satisfactory.

The structure of the power supply controller PSC was described above.The structure is characterized in that the voltage of the power switchPSW1 and the virtual power supply line VVDD are controlled so thatinformation can be retained within the information retention circuitswhen shifting from standby state to operation state, and when shiftingfrom the operation state to standby state.

Second Embodiment

Examples of specific circuits applicable to the power control method ofthe present invention are described next.

FIG. 31 is a circuit diagram of static memories applicable to thepresent invention. In the figure, CELL11 through CELLm1 and CELL1 nthrough CELLmn are static memory cells, BL1 through BLm are the bitlines, /BL1 through IBLm are auxiliary signals for the bit lines BL1through BLm, and WL1 through WLn are word lines. Here, PS1 through PSnare virtual power control circuits and include the power switch PSW1 andcurrent source PSW2. The virtual power line connecting the word line WL1to the memory cells (CELL11 through CELLm1) is VL1. The virtual powerline connecting the word line WLn to the memory cells (CELL1 n throughCELLmn) is VLn.

FIG. 32 is a timing chart for the operation in FIG. 31. The virtualpower line VL1 of the memory cell is driven up to the power supply VDDby the virtual power control circuits PS1 at time T1. After the virtualpower line VVDD voltage has been driven completely up to the powersupply VDD voltage, the word line WL1 is driven to high level at timeT1′. The bit lines from BL1 through BLm as well as from /BL1 through/BLm are driven by the memory cells CELL11 through CELLm1 selected bymeans of word line WL1. The information within the memory cells isexpressed in the bit lines. Though not shown in FIG. 31 for purposes ofsimplicity, the information in those bit lines is amplified by thesensing amp connected to the bit line. Information stored within thememory cell is in danger of being destroyed if the word line is drivento high level in the period while the virtual power line VVDD voltagehas not been driven completely to the power supply VDD voltagepotential. However, in the present invention there is no danger of theinformation being destroyed.

The word line WL1 is driven to low level at time T2 and then the powerswitch PSW1 turns off at time T2′. The leakage reduction method of thepresent invention is in this way capable of using the current sourcePSW2 to reduce the leakage current flowing in the memory cell whilestill retaining information stored within the memory cell. Theinformation stored in the memory cell is in danger of being destroyed bycurrent flow from the bit line unless the virtual power line voltage isdischarged after checking that the word line was driven to low level.However, in the present invention there is no danger of the informationbeing destroyed. Though not shown in FIG. 31 for purposes of simplicity,a bit line equalizer is connected to each of the bit line pairs from BL1and /BL1 and bit line pairs BLm and /BLm. These bit lines are equalizedto the voltage potential of power supply VDD by the bit line equalizerat time T3.

When the gate tunneling leakage of the memory cell is too large to beignored, the bit line may then be driven to a voltage lower than thepower supply VDD during standby (when the word line is at low level).The voltage across the gate-source of the memory cell transfertransistor can in this way be reduced and the gate tunneling leakagecurrent flowing that transfer transistor can be reduced. In this case ofcourse, the bit line voltage must be driven to the power supply VDDvoltage as in FIG. 32 before the word line is driven to high level attime T1 (This is called bit line reset operation.) Needless to say thisreset operation is unnecessary if a method to VSS precharge the bit lineis used. In the example in FIG. 33 there is no need to reset the bitline even if the bit line is VDD precharged.

The structure in FIG. 33 is composed of a power switch utilizing NMOStransistors instead of the power switch composed of PMOS transistors inFIG. 31. Here, PS1 through PSn are the virtual power control circuits ofthe present invention and contain the current source PSW2 n and thepower switch composed of NMOS transistors. The virtual ground line forthe memory cells (CELL11 through CELLm1) connected to the word line WL1is SL1. The virtual ground line for the memory cells (CELL1 n throughCELLmn) connected to the word line WLn is SLn.

FIG. 34 is a timing chart for the operation in FIG. 33. Simultaneouswith driving the word line WL1 to high level at time T1, the virtualground line SL1 of the memory cell connected to that word line is drivento ground VSS by the virtual power control circuit PS1. The bit linesfrom BL1 through BLm as well as from JBL1 through /BLm are driven by thememory cells CELL11 through CELLm1 selected by means of word line WL1.The information within the memory cells is expressed in the bit lines.Though not shown in FIG. 33 for purposes of simplicity, the informationin those bit lines is amplified by the sensing amp connected to the bitline. In FIG. 31, the word line is driven to high level after thevirtual power line VDD voltage is driven completely up to power supplyVDD voltage potential. However, in the structure of FIG. 34, the virtualground line VVSS and the word line WL may be driven simultaneously. Thismay be performed because there is no danger of the information storedwithin the memory cell being damaged by current from the bit word line.In fact, the virtual ground line VVSS can be completely driven to groundpotential before the word line is driven to high level so that bothdrive operations can overlap and memory cell readout can be performed athigh speed.

The power switch PSW1 n turns off when the word line WL1 is driven tolow level at time T2. The present invention can in this way reduce theleakage current flowing in the memory cell while still maintaining theinformation stored in the memory cell by the current source PSW2. Thoughnot shown in FIG. 33 for purposes of simplicity, a bit line equalizer isconnected to each of the bit line pairs of BL1 and /BL1 and the bit linepairs BLm and /BLm. Along with simultaneously driving the word line WL1to low level at time T2, the bit lines are driven to the voltagepotential of power supply VDD by this bit line equalizer.

In the structure of FIG. 34, the word line is at VSS voltage potentialprior to time T1 and after time T2. However, the word line may also bedriven below VFNL or above the VSS voltage potential so that GIDL andgate tunneling leakage current does not flow. The word line WL1 lowlevel may be at virtual ground line SL1 voltage potential and in thesame way the word line WL2 low level may be at virtual ground line SL2voltage potential. The ground of the word line driver can for example beachieved from the virtual ground line in this way.

The power supply voltage applied to the memory cell in FIG. 31 and FIG.33 may be raised higher than the power supply voltage applied to thesensing amp. In this case also, the precharge level of the bit line maybe the same voltage as the power supply voltage applied to the sensingamp. The gate dielectric (film) thickness of the MOS transistorcomprising the memory cells in this case is preferably thicker than thegate dielectric (film) thickness of the MOS transistor comprising thesensing amp. Of course, the precharge level of the bit line may also bethe same as the power supply voltage applied to the memory cells. Inthis case, the sensing amp inputs and amplifies a voltage higher thanits own power supply voltage so if the gate dielectric (film) thicknessof the MOS transistor comprising the sensing amp is thinner than thegate dielectric (film) thickness of the MOS transistor comprising thememory cells, then the sensing amp will need MOS transistors capable ofreducing the applied voltage (i.e. having a high breakdown voltage).

Of course the various adaptations and specific examples disclosed forstructures of the first embodiment are also applicable to the currentsource switches PS1 through PSn in the structures of the secondembodiment.

Third Embodiment

FIG. 35 is a block circuit diagram of the chip CHP1 structure of thepresent invention. Most of the signal wiring and power supply groundshave been omitted from the drawing for simplicity. The circuit blockCKT1 is a circuit block supplied with power directly from a power supplyVDD and not by way of the leakage reduction circuit of the presentinvention. Circuit blocks CKT2 a and CKT2 b are circuit blocks suppliedwith power from the power supply VDD by way of the leakage reductioncircuits PSM2 a and PSM2 b of the present invention. The circuit blockCKT3 is a circuit block is supplied with power directly from a powersupply VCC different from the power supply VDD and not by way of theleakage reduction circuit of the present invention. In the figure, MP20,MP21 a, MP22 b and MP23 are PMOS transistors. Also in the figure, MN20,MN21 a, MN22 b, MN23 are NMOS transistors. In the same figure, CTLa,CTLb are leakage control lines of the leakage reduction circuit of thepresent invention and equivalent to the request line REQ and responseline ACK of FIG. 22. The circuit block CKT1 in FIG. 35 is a circuitrequiring that power be constantly applied. These for example arecircuits to control the leakage reduction circuits PSM2 a and PSM2 b,real time clocks (RTC), interrupt handling circuits, a DRAM refreshcircuit, a memory, etc. The circuit block CKT3 is an I/O circuit. Thepower supply VCC is a power supply for interface with sections externalto the chip. This power supply VCC is a voltage higher than the powersupply VDD. For example, the VCC voltage may be 3.3 volts or 2.5 voltsversus a VDD voltage of 1.8 volts. The gate dielectric (film) thicknessof the MOS transistors MP23 and MN23 comprising the input buffer andoutput buffer are thicker than the gate dielectric thickness of theother MOS transistors.

By establishing multiple leakage control circuits as in FIG. 35, andcontrolling the leakage current of circuits grouped in multiple circuitsintegrated onto the chip, the leakage current of the overall chip can beefficiently reduced.

The circuit diagram in FIG. 36 is a structure for supplying the powersupply of circuit block CKT1, and the power supply of circuit block CKT2a and CKT2 b from separate power supply terminals. The circuit blockCKT1 as described above is a circuit requiring that power becontinuously applied for operation. Applying the leakage currentreduction method of the present invention will have little effect onthis circuit. However, the circuit comprising the circuit block CKT1 isthe circuit described in the explanation for FIG. 35, and the operatingfrequency required for that circuit should in many cases be lower thanthe operating frequency required in circuits contained in the circuitblocks CKT2 a and CKT2 b. Therefore, when using the same MOS transistorsin circuit block CKT1 and circuit blocks CKT2 a and CKT2 b, the powerconsumption due to leakage current versus power consumption due tooperating current in the current block CKT1 becomes drastically largecompared to that in circuit block CKT2. To prevent this it is preferableto raise the threshold voltage in the MOS transistors comprising thecurrent block CKT1. This may also be accomplished by setting the circuitblock CKT1 and CKT2 to the same gate dielectric thickness, or changingthe channel impurities (doping) or changing the substrate bias value.The thickness of the gate dielectric of the MOS transistors of circuitblock CKT2 may also be made thicker than the gate dielectric of the MOStransistors of circuit block CKT1. In this case, it is preferable toraise the voltage of power supply VDD2 applied to the current block CKT1to a voltage higher than power supply VDD. The leakage current of theentire chip can in this way be efficiently reduced. The thickness of MOStransistor gate dielectric may be made thicker in the order of: MOStransistors comprising circuit block CKT2 a or CKT2 b, MOS transistorscomprising circuit block CKT1, and the MOS transistors comprisingcircuit block CKT3. The MOS transistors comprising the circuit blockCKT1 may also be the same gate dielectric thickness as the MOStransistors comprising circuit block CKT3.

FIG. 37 is a structure showing when the power supply VDD has been madeto drop lower than the power supply VDD2 voltage, when the voltage ofthe VDD2 power supply in FIG. 36 has been raised to a voltage higherthan the power supply VDD. Here, VDC is the voltage regulator circuit.There are no particular restrictions on this regulator circuit and aseries regulator may be utilized or a switching regulator may beutilized. The various types of power supplied to the chip may bereduced.

The voltage regulator VDC and leak regulator circuit PSM2 a or PSM2 bcomponents in the example in FIG. 37 can be combined together. Thatstructure is shown in FIG. 38. In the figure, PSW2 is the currentsource, OPAMP is the operational amplifier and VREF is the referencevoltage. During operation, a voltage VDD can be supplied to the virtualpower line VYDD2 a by applying voltage VDD to VRBF. To turn the powerswitch PSW1 off, VREF may be set to a sufficiently low voltage (forexample below 0 volts). The power switch PSW1 s has smaller drive powerthan the power switch PSW1. This is utilized for reducing noise duringthe shift from the standby state to operation state. The operatingmethod is the same as the operating method relating to FIG. 27. Evenhere, there are no particular restrictions on the threshold voltage orgate dielectric thickness of the power switch PSW1, however an optimalselection should be made according to the voltage of VDD.

The voltage regulator circuit can monitor the virtual power line VVDD2 aor VVDD2 b voltages and may regulate voltage by applying the desired VDDvoltage to the virtual power line even if the current consumption islarge in circuit blocks CKT2 a and CKT2 b. When the circuit path fromthe power supply terminal of the chip to the circuit within the circuitblock has a high impedance, a so-called IR drop occurs due to currentconsumption of the circuit block CKT2 a or CKT2 b. This IR drop can beprevented by the above described formula. The virtual power line VVDD2 aor VVDD2 b voltages can also be changed based on the information onvariations (non-uniformities) in chip manufacture or information onenvironmental fluctuations, and the characteristics (or properties) ofthe circuit block CKT2 a or CKT2 b that changed due to these variationsor fluctuation can be corrected.

The structure of FIG. 38 can also utilize the method for applying thevoltage VFNL to the virtual power line VVDD during standby as in thestructure in FIG. 17. The PSW2 of FIG. 38 is not required in this case.Two types of control methods may be used in this case. In the firstmethod, the VDD voltage is applied to VREF during operation as describedabove, and the power supply voltage VDD is applied to the virtual powerline VVDD2 a. During standby the VFNL (<VDD) voltage is applied to VREF,and the voltage VFNL is supplied to the virtual power line VVDD2 a. Thevoltage source VFNLGEN was required by the structure of FIG. 17, howeverthis structure (FIG. 38) has the advantage of being able to use anoperational amplifier OPAMP and power switch PSW1 instead. In the secondmethod, besides the operational amplifier OPAMP and power switch PSW1,the voltage source VFNLGEN is installed on the virtual power line VVDD2a. During operation, a voltage VDD is applied to VREF as describedabove, and a voltage VDD is supplied to the virtual power line VVDD2 a.During standby, 0 volts is applied to VREF, and the voltage VFNL issupplied to the virtual power line VVDD2 a from the voltage sourceVFNLGEN.

Either method has the advantage that the virtual power line VVDD2 avoltage during standby can be made a voltage close to VRTN by directlyapplying VFNL to the virtual power line VVDD2 a during standby state.The value of the directly applied VFNL voltage can also be directlycontrolled according to the voltage of power supply VDD, the temperatureand process conditions, etc.

The examples in the structures from FIG. 35 to FIG. 38 utilized PMOStransistors in the power switch. However, an NMOS transistor PSW1 n mayalso be used as the above described power switch. FIG. 39 is thestructure of FIG. 37 but with leakage control circuits PSM2 a 2 and PSM2b 2 using NMOS transistors as the power switch. Generally, NMOStransistors have small on-resistance per gate width as compared withPMOS transistors. The structure of FIG. 39 can more easily suppress adrop in speed in the circuit block during the operation state then canthe structure in FIG. 37.

Of course the various adaptations and specific examples disclosed forthe first embodiment are also applicable to the leakage currentreduction circuit of the third embodiment.

The signal transfer circuits between the circuit blocks have beenomitted from FIG. 35 through FIG. 39. During standby, the voltagesupplied to the circuits within the block is reduced when using thecurrent leakage reduction method of the present invention. The amplitudeof the signals output from that circuit is therefore also reduced. Levelconverter circuits must be installed between the circuit blocks totransfer these small amplitude signals to other circuit blocks withoutcausing abnormal current flow. The structure of a level conversioncircuit is shown in FIG. 40. In the figure, MP30, MP31, MP32, MP33denote PMOS transistors and MN30, MN31 denote NMOS transistors. Thereare no particular restrictions on the threshold voltage and gatedielectric thickness of the transistors.

When the circuit block CKT2 a is in standby with the current leakagereduction method of the present invention, the signal amplitude of d1 sand its complementary signal are reduced compared to the signalamplitude of VDD during the operation state. However, this is amplifiedup to the power supply VDD voltage by the latch level conversion circuitLVL1 in the structure of FIG. 40 and output as die. Signals can beexchanged without abnormal current flow occurring even if the CMOScircuit input with die is supplied with the power supply voltage of VDD.

The toggle frequency of the latch type level shifter LVL1 is greatlydependent on the input signal amplitude. However, when the inputamplitude of the latch type level shifter LVL1 has become small, thecircuit (circuit block CKT2 a) outputting that signal is in the standbystate and the logic level input signal cannot be toggled. The latch typelevel shifter LVL1 therefore need only amplify the signal amplitude highenough to maintain (keep) the logic levels so a drop in toggle frequencyis not a problem.

The deep stand-by state described in FIG. 18 and FIG. 19 is implementedin the circuit block CKT2 a. During standby, when d1 s and /d1 s are ina floating state, abnormal current flow might occur in the latch typelevel shifter LVL1. To prevent that abnormal current flow, a method forexample, as disclosed in JP-A-11195975/1999 may be utilized. Also, FIG.40 is an effective latch-level shifter structure utilizing PMOStransistors as the power switch shown in FIG. 1. When using NMOStransistors as the power switch of FIG. 20, a latch type level shifteras in FIG. 40 can be utilized as the complimentary type latch-levelshifter.

Specific examples were described based on the embodiments of theinvention rendered by the inventors. However the present invention isnot limited to these examples and needless to say, different types ofchanges and adaptations may be implemented without departing from thescope and spirit of the invention. For example, different types ofchanges can be made in the specific structure of the circuits and thestructural layout.

What is claimed is:
 1. A semiconductor integrated circuit devicecomprising: a circuit block containing a first MOS transistor; and aleakage current control circuit containing a second MOS transistor and acurrent source, wherein a source-drain path of said second MOStransistor is provided between a voltage point where overacting voltageis supplied and a power supply line for said circuit block, said currentsource is connected to said power supply line, said power supply line isdriven to a first voltage by said second MOS transistor in a firststate, said power supply line is controlled at a second voltage bycurrent flowing in said current source in a second state, a voltageapplied across the source-drain of said first MOS transistor in saidsecond state is lower than a voltage applied across the source-drain ofsaid first MOS transistor in said first state, in a third state, thecurrent flowing in said current source is controlled and said powersupply line is driven at a third voltage, and a voltage applied acrossthe source-drain of said first MOS transistor in said third state islower than the voltage applied across the source-drain of said first MOStransistor in said second state.
 2. A semiconductor integrated circuitdevice according to claim 1, wherein in said second state, currentflowing to said circuit block from said power supply line is limited bysaid current source.
 3. A semiconductor integrated circuit deviceaccording to claim 1, wherein said current source is composed of a thirdMOS transistor possessing the same threshold voltage and gate dielectricthickness as said first MOS transistor, and in said second state,current flowing in said current source is determined by the off-currentof said third MOS transistor.
 4. A semiconductor integrated circuitdevice according to claim 1, wherein said current source is composed ofa third MOS transistor, and in said second state, current flowing insaid current source is determined by the ON-current of said third MOStransistor.
 5. A semiconductor integrated circuit device according toclaim 1, wherein a substrate of said first MOS transistor is connectedto the power supply line of said circuit block.
 6. A semiconductorintegrated circuit device according to claim 1, wherein the circuitblock includes a volatile information retention circuit, in said secondstate, information of said volatile information retention circuit ismaintained, and in said third state, the information of said volatileinformation retention circuit is lost.
 7. A semiconductor integratedcircuit device according to claim 6, wherein said volatile informationretention circuit is a flip-flop or memory cell.
 8. A semiconductorintegrated circuit device according to claim 6, wherein said secondvoltage is smaller than the threshold voltage absolute value of saidfirst MOS transistor.
 9. A semiconductor integrated circuit deviceaccording to claim 1, further comprising a substrate control circuitwherein said substrate control circuit controls a substrate voltagepotential of said first MOS transistor, and said substrate voltagepotential of said first MOS transistor in said first state is differentfrom the value in said second state.
 10. A semiconductor integratedcircuit device, comprising: a circuit block containing a first MOStransistor; and a leakage current control circuit containing a secondMOS transistor and a power supply, wherein a source-drain path of saidsecond MOS transistor is provided between a voltage point where anoperating voltage is supplied and a power supply line for said circuitblock, said power supply is connected to said power supply line, saidpower supply line is driven to a first voltage by said second MOStransistor in a first state, said power supply line is controlled at asecond voltage by a voltage output from said power supply in a secondstate, a voltage applied across the source-drain of said first MOStransistor in said second state is lower than a voltage applied acrossthe source-drain of said first MOS transistor in said first state, in athird state, the voltage output from said power supply is controlled andsaid power supply line is driven at a third voltage, and a voltageapplied across the source-drain of said first MOS transistor in saidthird state is lower than the voltage applied across the source-drain ofsaid first MOS transistor in said second state.
 11. A semiconductorintegrated circuit device according to claim 10, further comprising asubstrate control circuit, wherein said substrate control circuitcontrols a substrate voltage potential of said first MOS transistor, andsaid substrate voltage potential of said first MOS transistor has adifferent value in said first state from the value in said second state.12. A semiconductor integrated circuit device according to claim 10,wherein a substrate of said first MOS transistor is connected to thepower supply line of said circuit block.
 13. A semiconductor integratedcircuit device according to claim 10, wherein the circuit block includesa volatile information retention circuit, in said second state,information of said volatile information retention circuit ismaintained, and in said third state, the information of said volatileinformation retention circuit is lost.
 14. A semiconductor integratedcircuit device according to claim 13, wherein said volatile informationretention circuit is a flip-flop or memory cell.
 15. A semiconductorintegrated circuit device according to claim 13, wherein said secondvoltage is smaller than an absolute value of the threshold voltage ofsaid first MOS transistor.